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?2008 silicon storage technology, inc. s71318-02-000 02/09 1 the sst logo and superflash are registered trademarks of silicon storage technology, inc. these specifications are subject to change without notice. data sheet features: ? high gain: ? typically 29 db gain across 2.4-2.5 ghz ? typically 29-26 db gain across 4.9-5.8 ghz ? high linear output power: ? >25 dbm p1db (pulsed single-tone signal) across 2.4-2.5 ghz ? meets 802.11b ofdm acpr requirement up to 23.5 dbm across 2.4-2.5 ghz ? meets 802.11g ofdm acpr requirement up to 23 dbm across 2.4-2.5 ghz ? added evm ~4% up to 19 dbm for 54 mbps 802.11g signal across 2.4-2.5 ghz ? >24 dbm p1db across 4.9-5.8 ghz ? meets 802.11a ofdm acpr requirement up to 22.5 dbm across 4.9-5.8 ghz ? added evm ~4% up to 18 dbm for 54 mbps 802.11a signal across 4.9-5.8 ghz ? high power-added efficiency/low operating current for 802.11a/b/g applications ? ~160 ma @ p out = 19 dbm for 802.11g ? ~235 ma @ p out = 23.5 dbm for 802.11b ? ~270 ma @ p out = 18 dbm for 802.11a ? built-in ultra-low i ref power-up/down control ?i ref < 2 ma ? high-speed power-up/down ? turn on/off time (10%-90%) <100 ns ? typical power-up/down delay with driver delay included <200 ns ? high temperature stability ? ~1 db gain/power variation between 0c to +85c across 2.4-2.5 ghz ? ~3/1 db gain/max linear power variation between 0c to +85c across 4.9-5.8 ghz ? 0.5 db detector variation between 0c to +85c ? low shut-down current (< 2 a) ? 20 db dynamic range on-chip power detection ? built-in input/output matching ? packages available ? 16-contact lga package (4mm x 4mm) ? all non-pb (lead-free) devices are rohs compliant. applications: ? wlan (ieee 802.11a/g/b) ? japanese wlan ? hyperlan2 ? multimedia ?home rf ? cordless phones product description the sst13lp05 is a fully matched, dual-band power amplifier module (pam) based on the highly-reliable ingap/ gaas hbt technology. this pam provides excellent rf performance, temperature-stable power detectors, and low-current analog on/off control interfaces. the sst13lp05 provides stable rf and power detector perfor- mance over a large v cc power supply variation, with an ultra-low shut-down current. with a near-zero rest of b ill of materials (rbom), the sst13lp05 is designed for 802.11a/b/g applications cov- ering frequency bands 2.4-2.5 ghz and 4.9-5.8 ghz for u.s., european, and japanese markets. the sst13lp05 has excellent linearity, typically 4% added error vector magnitude (evm) at 19 dbm output power. this output power is essential for 54 mbps 802.11g opera- tion while meeting 802.11g spectrum mask at 23 dbm and 802.11b spectrum mask at 23.5 dbm. for 802.11a opera- tion, the sst13lp05 typically demonstrates <4% added evm at 18 dbm output power while meeting 802.11a spec- trum mask at 22.5 dbm. the sst13lp05 also has wide-range (>20 db), tempera- ture-stable (0.5 db across 0c to +85c), directionally- coupled, power detectors which provide a reliable and cost- effective solution to board-level power control. the device?s analog on/off control can be driven by an analog or digital control signal from either a transceiver or baseband chip. these features, coupled with low operating current, make the sst13lp05 ideal for the final stage power amplifica- tion in both battery-powered 802.11a/b/g wlan trans- mitters and access point applications. the sst13lp05 is offered in a 16-contact lga package. see figure 2 for pin assignments and table 1 for pin descriptions. 2.4-2.5 ghz / 4.9-5.8 ghz dual-band power amplifier module sst13lp05 sst13lp052.4 - 2.5 ghz / 4.9-5.8 ghz dual-band power amplifier
data sheet 2.4-2.5 ghz / 4.9-5.8 ghz dual-band power amplifier sst13lp05 ?2008 silicon storage technology, inc. s71318-02-000 02/09 2 functional blocks figure 1: functional block diagram v reg _lb v cc _lb nc det_lb v reg _hb nc v cc _hb det_hb nc rf out _lb rf out _hb nc nc rf in _lb rf in _hb nc 1318 b1.0 56 8 16 15 14 9 11 12 10 13 2 1 4 3 7 bias network bias network
data sheet 2.4-2.5 ghz / 4.9-5.8 ghz dual-band power amplifier sst13lp05 3 ?2008 silicon storage technology, inc. s71318-02-000 02/09 pin assignments figure 2: pin assignments for 16-contact lga v reg _lb v cc _lb nc det_lb v reg _hb nc v cc _hb det_hb nc rf out _lb rf out _hb nc nc rf in _lb rf in _hb nc 1318 p1.1 56 8 16 15 14 9 11 12 10 13 2 1 4 3 7 top view (contacts facing down) rf and dc gnd 0
data sheet 2.4-2.5 ghz / 4.9-5.8 ghz dual-band power amplifier sst13lp05 ?2008 silicon storage technology, inc. s71318-02-000 02/09 4 pin descriptions table 1: pin description symbol pin no. pin name type function gnd 0 ground ground pad nc 1 no connection unconnected pin rf in _lb 2 i 50 matched rf input for low band, ac coupled rf in _hb 3 i 50 matched rf input for high band, ac coupled nc 4 no connection unconnected pin v reg _hb 5 power supply pwr analog current control for high band nc 6 no connection unconnected pin v cc _hb 7 power supply pwr v cc power supply for high band d et _hb 8 o detector voltage output for high band nc 9 no connection unconnected pin rf out _hb 10 power supply o/pwr 50 matched rf output for high band rf out _lb 11 power supply o/pwr 50 matched rf output for low band nc 12 no connection unconnected pin d et _lb 13 o detector voltage output for low band v cc _lb 14 power supply pwr v cc power supply for low band nc 15 no connection unconnected pin v reg _lb 16 power supply pwr analog current control for low band t1.0 1318
data sheet 2.4-2.5 ghz / 4.9-5.8 ghz dual-band power amplifier sst13lp05 5 ?2008 silicon storage technology, inc. s71318-02-000 02/09 electrical specifications the ac and dc specifications for the power amplifier interface signals. refer to tables 2 and 4 for the dc voltage and current specifications. refer to figures 3 through 22 for the rf performance. absolute maximum stress ratings applied conditions greater than those lis ted under ?absolute maximum stress rat- ings? may cause permanent damage to the device. this is a stress rating only and functional oper ation of the device at these conditions or conditions greater than those defined in the operati onal sections of this data sh eet is not implied. exposure to absolute maximum stress rating conditions may affect device reliability. supply voltage (v cc ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0. 3v to +3.6v reference voltage (v ref ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3v to + 3.3v dc supply current (i cc ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 ma operating temperature (t a ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oc to +85oc storage temperature (t stg ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oc to +120oc maximum junction temperature (t j ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150oc
data sheet 2.4-2.5 ghz / 4.9-5.8 ghz dual-band power amplifier sst13lp05 ?2008 silicon storage technology, inc. s71318-02-000 02/09 6 for 802.11b/g operation table 2: dc electrical characteristics symbol parameter min. typ max. unit v cc supply voltage 3.0 3.3 3.6 v i cc supply current for 802.11g, 19 dbm 160 ma for 802.11b, 23.5 dbm 235 ma i reg analog control current at on state 2 ma v reg reference voltage 2.95 v t2.0 1318 table 3: ac electrical characteristics for configuration symbol parameter min. typ max. unit f l-u frequency range 2.4 2.5 ghz g small signal gain 28 29 db g var1 gain variation over temperature 0 c ? 85 c-1 1db g var2 gain flatness over any 50 mhz bandwidth -0.3 0.3 db acpr meet 11b spectrum mask 22 23 dbm meet 11g ofdm 54 mbps spectrum mask 22 23 dbm added evm p out = 19 dbm with 54mbps -28 db 11g ofdm signal when operating at 3.3v vcc 4 % 2f, 3f, 4f, 5f harmonics at p out = 20 dbm -50 dbc spurious non-harmonics at p out = 20 dbm -60 dbc in/out return loss at 50 nominal impedance 6 db t3.0 1318
data sheet 2.4-2.5 ghz / 4.9-5.8 ghz dual-band power amplifier sst13lp05 7 ?2008 silicon storage technology, inc. s71318-02-000 02/09 for 802.11a operation table 4: dc electrical characteristics symbol parameter min. typ max. unit v cc supply voltage 3 3.3 3.6 v i cc supply current for 802.11a, 18 dbm 270 ma i reg analog control current at on state 2 a v reg reference voltage 2.95 v t4.1 1318 table 5: ac electrical characteristics for configuration symbol parameter min. typ max. unit f l-u frequency range 4.92 5.805 ghz g small signal gain across 4.9- 5.8 ghz 26 db g var1 gain variation over temperature 0 c ? 85 c-1 1db g var2 gain flatness over any 100 mhz bandwidth -0.5 0.5 db acpr meet 11a ofdm 54 mbps spectrum mask 22 22.5 dbm added evm p out = 18 dbm with 54mbps -28 db 11aofdm signal when operating at 3.3v vcc 4 % 2f, 3f, 4f, 5f harmonics at 20 dbm -45 dbc t5.1 1318
data sheet 2.4-2.5 ghz / 4.9-5.8 ghz dual-band power amplifier sst13lp05 ?2008 silicon storage technology, inc. s71318-02-000 02/09 8 typical low band perfor mance for 802.11b/g test conditions: v cc = 3.3v, t a = 25c, v ref = 2.95v unless otherwise noted figure 3: low band s-parameters 1318 sparmlowb.0 s11 versus frequency -30 -25 -20 -15 -10 -5 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 frequency (ghz) s11 (db) s12 versus frequency -80 -70 -60 -50 -40 -30 -20 -10 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 frequency (ghz) s12 (db) s21 versus frequency -40 -30 -20 -10 0 10 20 30 40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 frequency (ghz) s21 (db) s22 versus frequency -30 -25 -20 -15 -10 -5 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 frequency (ghz) s22 (db)
data sheet 2.4-2.5 ghz / 4.9-5.8 ghz dual-band power amplifier sst13lp05 9 ?2008 silicon storage technology, inc. s71318-02-000 02/09 test conditions: v cc = 3.3 v, v ref = 2.95 v, 54 mbps 802.11g ofdm signal figure 4: low band output power versus input power figure 5: low band power gain versus output power output power versus input power 9 10 11 12 13 14 15 16 17 1 8 19 20 21 22 -21 -20 -19 -1 8 -17 -16 -15 -14 -13 -12 -11 -10 -9 - 8 -7 input power (dbm) output power (dbm) fre q =2.412 ghz fre q =2.442 ghz fre q =2.4 8 4 ghz 131 8 f5.1 power gain versus output power 20 22 24 26 2 8 30 32 34 36 3 8 40 9 10111213141516171 8 19 20 21 22 output power (dbm) power gain (db) fre q =2.412 ghz fre q =2.442 ghz fre q =2.4 8 4 ghz 131 8 f6.1
data sheet 2.4-2.5 ghz / 4.9-5.8 ghz dual-band power amplifier sst13lp05 ?2008 silicon storage technology, inc. s71318-02-000 02/09 10 figure 6: low band supply cu rrent versus output power figure 7: low band pae versus output power supply current versus output power 8 0 90 100 110 120 130 140 150 160 170 1 8 0 190 200 9 10111213141516171 8 19 20 21 22 output power (dbm) supply current (ma) fre q =2.412 ghz fre q =2.442 ghz fre q =2.4 8 4 ghz 131 8 f7.1 pae versus output power 0 2 4 6 8 10 12 14 16 1 8 20 22 24 9 10111213141516171 8 19 20 21 22 output power (dbm) pae (%) fre q =2.412 ghz fre q =2.442 ghz fre q =2.4 8 4 ghz 131 8 f 8 .1
data sheet 2.4-2.5 ghz / 4.9-5.8 ghz dual-band power amplifier sst13lp05 11 ?2008 silicon storage technology, inc. s71318-02-000 02/09 figure 8: low band emv versus output power figure 9: low band 802.11b spectrum mask at 23 dbm with dc current of 220 ma evm versus output power 0 1 2 3 4 5 6 7 8 9 10 9 10111213141516171 8 19 20 21 22 output power (dbm) evm (%) fre q =2.412 ghz fre q =2.442 ghz fre q =2.4 8 4 ghz 131 8 f9.1 -70 -60 -50 -40 -30 -20 -10 0 10 2.35 2.40 2.45 2.50 2.55 fre q uency (ghz) amplitude (db) fre q = 2.412 ghz fre q = 2.442 ghz fre q = 2.4 8 4 ghz 131 8 f11 0
data sheet 2.4-2.5 ghz / 4.9-5.8 ghz dual-band power amplifier sst13lp05 ?2008 silicon storage technology, inc. s71318-02-000 02/09 12 test conditions: v cc = 3.3v, v ref = 2.95v, t a = 25c, 1 mbps 802.11b cck signal figure 10: low band 802.11b spectrum mask at 23.5 dbm with dc current of 235 ma - 8 0 -70 -60 -50 -40 -30 -20 -10 0 10 2.35 2.40 2.45 2.50 2.55 fre q uency (ghz) amplitude (db) fre q = 2.412 ghz fre q = 2.442 ghz fre q = 2.4 8 4 ghz 131 8 f12.0
data sheet 2.4-2.5 ghz / 4.9-5.8 ghz dual-band power amplifier sst13lp05 13 ?2008 silicon storage technology, inc. s71318-02-000 02/09 low band power detect or characteristics test conditions: v cc = 3.3v, v ref = 2.95v, t a = 25c, 54 mbps 802.11g ofdm signal figure 11: low band detector voltage versus output power detector volta g e versus output power 0.60 0.70 0. 8 0 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 9 10111213141516171 8 19 20 21 22 output power (dbm) detector volta g e (v) fre q =2.412 ghz fre q =2.442 ghz fre q =2.4 8 4 ghz 131 8 f10.1
data sheet 2.4-2.5 ghz / 4.9-5.8 ghz dual-band power amplifier sst13lp05 ?2008 silicon storage technology, inc. s71318-02-000 02/09 14 typical high band performance for 802.11a test conditions: v cc = 3.3v, t a = 25c, v ref = 2.95v unless otherwise noted figure 12: high band s-parameters 1318 sparmhighb.0 s11 versus frequency -30 -25 -20 -15 -10 -5 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 frequency (ghz) s11 (db) s12 versus frequency -80 -70 -60 -50 -40 -30 -20 -10 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 frequency (ghz) s12 (db) s21 versus frequency -40 -30 -20 -10 0 10 20 30 40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 frequency (ghz) s21 (db) s22 versus frequency -30 -25 -20 -15 -10 -5 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 frequency (ghz) s22 (db)
data sheet 2.4-2.5 ghz / 4.9-5.8 ghz dual-band power amplifier sst13lp05 15 ?2008 silicon storage technology, inc. s71318-02-000 02/09 test conditions: v cc = 3.3v, v ref = 2.95v, 54 mbps 802.11a ofdm signal figure 13: high band output power versus input power figure 14: high band power gain versus output power output power versus input power 8 9 10 11 12 13 14 15 16 17 1 8 19 20 21 22 -22 -21 -20 -19 -1 8 -17 -16 -15 -14 -13 -12 -11 -10 -9 - 8 -7 -6 -5 -4 input power (dbm) output power (dbm) fre q =4.920 ghz fre q =5.1 8 0 ghz fre q =5.320 ghz fre q =5. 8 05 ghz 131 8 f17.1 power gain versus output power 20 22 24 26 2 8 30 32 34 36 3 8 40 9 10111213141516171 8 19 20 21 22 output power (dbm) power gain (db) fre q =4.920 ghz fre q =5.1 8 0 ghz fre q =5.320 ghz fre q =5. 8 05 ghz 131 8 f1 8 .1
data sheet 2.4-2.5 ghz / 4.9-5.8 ghz dual-band power amplifier sst13lp05 ?2008 silicon storage technology, inc. s71318-02-000 02/09 16 figure 15: high band supply current versus output power figure 16: high band pae versus output power supply current versus output power 1 8 0 200 220 240 260 2 8 0 300 320 340 360 9 10111213141516171 8 19 20 21 22 output power (dbm) supply current (ma) fre q =4.920 ghz fre q =5.1 8 0 ghz fre q =5.320 ghz fre q =5. 8 05 ghz 131 8 f19.1 pae versus output power 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 9 10111213141516171 8 19 20 21 22 output power (dbm) pae (%) fre q =4.920 ghz fre q =5.1 8 0 ghz fre q =5.320 ghz fre q =5. 8 05 ghz 131 8 f20.2
data sheet 2.4-2.5 ghz / 4.9-5.8 ghz dual-band power amplifier sst13lp05 17 ?2008 silicon storage technology, inc. s71318-02-000 02/09 figure 17: high band evm versus output power figure 18: high band 802.11a spectrum mask at 4.92 ghz at output power 22.5 dbm with dc current at 370 ma evm versus output power 0 1 2 3 4 5 6 7 8 9 10 9 10111213141516171 8 19 20 21 22 output power (dbm) evm (%) fre q =4.920 ghz fre q =5.1 8 0 ghz fre q =5.320 ghz fre q =5. 8 05 ghz 131 8 f21.1 -70 -60 -50 -40 -30 -20 -10 0 10 4. 8 54. 8 74. 8 9 4.91 4.93 4.95 4.97 4.99 fre q uency (ghz) amplitude (db) 131 8 f23.0
data sheet 2.4-2.5 ghz / 4.9-5.8 ghz dual-band power amplifier sst13lp05 ?2008 silicon storage technology, inc. s71318-02-000 02/09 18 figure 19: high band 802.11a spectrum mask at 5.18 ghz at output power 22.5 dbm with dc current at 355 ma figure 20: high band 802.11a spectrum mask at 5.32 ghz at output power 23 dbm with dc current at 360 ma -70 -60 -50 -40 -30 -20 -10 0 10 5.11 5.13 5.15 5.17 5.19 5.21 5.23 5.25 fre q uency (ghz) amplitude (db) 131 8 f24.0 -70 -60 -50 -40 -30 -20 -10 0 10 5.25 5.27 5.29 5.31 5.33 5.35 5.37 5.39 fre q uency (ghz) amplitude (db) 131 8 f25.0
data sheet 2.4-2.5 ghz / 4.9-5.8 ghz dual-band power amplifier sst13lp05 19 ?2008 silicon storage technology, inc. s71318-02-000 02/09 figure 21: high band 802.11a spectrum mask at 5.805 ghz at output power 23 dbm with dc current at 350 ma -70 -60 -50 -40 -30 -20 -10 0 10 5.74 5.76 5.7 8 5. 8 05. 8 25. 8 45. 8 65. 88 fre q uency (ghz) amplitude (db)
data sheet 2.4-2.5 ghz / 4.9-5.8 ghz dual-band power amplifier sst13lp05 ?2008 silicon storage technology, inc. s71318-02-000 02/09 20 high band power detector characteristics test conditions: v cc = 3.3v, v ref = 2.95v, t a = 25c, 54 mbps 802.11a ofdm signal figure 22: high band detector voltage versus output power detector volta g e versus output power 0.60 0.65 0.70 0.75 0. 8 0 0. 8 5 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 9 10111213141516171 8 19 20 21 22 output power (dbm) detector volta g e (v) fre q =4.920 ghz fre q =5.1 8 0 ghz fre q =5.320 ghz fre q =5. 8 05 ghz 131 8 f22.2
data sheet 2.4-2.5 ghz / 4.9-5.8 ghz dual-band power amplifier sst13lp05 21 ?2008 silicon storage technology, inc. s71318-02-000 02/09 figure 23: typical application circuit 1318 app_cir 1.1 rf in _lb 50 v cc _hb rf out _hb 1 f rf in _hb 50 50 rf out _lb 50 d et _hb v ref _hb v cc _lb 1 f v ref _lb d et _lb 56 8 16 15 14 9 11 12 10 13 2 1 4 3 7 bias network bias network
data sheet 2.4-2.5 ghz / 4.9-5.8 ghz dual-band power amplifier sst13lp05 ?2008 silicon storage technology, inc. s71318-02-000 02/09 22 product ordering information valid combinations for sst13lp05 SST13LP05-MLCF sst13lp05 evaluation kits SST13LP05-MLCF-k note: consult your sst sales representative to confirm availability of valid combinations. sst13lp 05 - mlc f sstxx l p xx -xxx x environmental attribute f 1 = non-pb contact (lead) finish package modifier c = 16 leads package type ml = lflga product family identifier product type p = power amplifier voltag e l = 3.0-3.6v frequency of operation 3 = 2.4 ghz / 5 ghz dual-band product line 1 = sst communications 1. environmental suffix ?f? denotes non-pb solder. sst non-pb solder devices are ?rohs compliant?.
data sheet 2.4-2.5 ghz / 4.9-5.8 ghz dual-band power amplifier sst13lp05 23 ?2008 silicon storage technology, inc. s71318-02-000 02/09 figure 24: 16-contact low-profile, fine -pitch, land grid array (lflga) sst package code: mlc table 6: revision history revision description date 00 ? initial release of data sheet. dec 2006 01 ? updated document status from prelim inary specification to data sheet apr 2008 02 ? updated ?contact information? on page 24. feb 2009 note: 1. from the bottom view, the pin #1 indicator may be either a 45-degree chamfer or a half-circle notch. 2. the external paddle is electrically connected to the die back-side and should be soldered to the vss of the pc board. connection of this paddle to any other voltage potential will result in shorts and/or electrical malfunction of the device. 3. untoleranced dimensions are nominal target values. 4. land set back from body edge applies to all lands of package. 5. all linear dimensions are in millimeters (max/min). 16-lga-4x4-mlc-0.0 2.7 pin #1 0.0684 bsc 4 2.7 1.40 1.20 pin #1 laser engraved top view bottom view side view 1mm 0.35 0.65 bsc 0.39 4.00 0.10 4.00 0.10 see notes 1 and 2 0.075
data sheet 2.4-2.5 ghz / 4.9-5.8 ghz dual-band power amplifier sst13lp05 ?2008 silicon storage technology, inc. s71318-02-000 02/09 24 contact information marketing sst communications corp. 5340 alla road, ste. 210 los angeles, ca 90066 tel: 310-577-3600 fax: 310-577-3605 sales and marketing offices north america asia pacific north silicon storage technology, inc. sst macao 1171 sonora court room n, 6th floor, sunnyvale, ca 94086-5308 macao finance center, no. 202a-246, tel: 408-735-9110 rua de pequim, macau fax: 408-735-9036 tel: 853-2870-6022 fax: 853-2870-6023 europe asia pacific south silicon storage technology ltd. sst communications co. mark house 16f-6, no. 75, sec.1, sintai 5 th rd 9-11 queens road sijhih cit y, taipei county 22101 hersham, surrey taiwan, r.o.c. kt12 5lu uk tel: 886-2-8698-1198 tel: 44 (0) 1932-238133 fax: 886-2-8698-1190 fax: 44 (0) 1932-230567 japan korea sst japan sst korea nof tameike bldg, 9f 6f, heungkuk life insurance bldg 6-7 1-1-14 akasaka, minato-ku sunae-dong, bundang-gu, sungnam-si tokyo, japan 107-0052 kyungki-do, korea, 463-020 tel: 81-3-5575-5515 tel: 82-31-715-9138 fax:81-3-5575-5516 fax: 82-31-715-9137 silicon storage technology, inc. ? 1171 sonora court ? sunnyvale, ca 94086 ? telephone 408-735-9110 ? fax 408-735-9036 www.superflash.com or www.sst.com

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